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TrenchStop(R) Series
IKP10N60T p
Low Loss DuoPack : IGBT in TrenchStop(R) and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
C
* * * *
*
* * * * * * *
Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time - 5s Designed for : - Variable Speed Drive for washing machines, air conditioners and induction cooking - Uninterrupted Power Supply TrenchStop(R) and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge Very soft, fast recovery anti-parallel EmCon HE diode Qualified according to JEDEC1 for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 600V IC 10A VCE(sat),Tj=25C 1.5V Tj,max 175C Marking Code K10T60 Package
G
E
PG-TO-220-3-1
Type IKP10N60T
PG-TO-220-3-1
Maximum Ratings Parameter Collector-emitter voltage DC collector current, limited by Tjmax TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 600V, Tj 175C Diode forward current, limited by Tjmax TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time
2)
Symbol VCE IC
Value 600 20 10 30 30 20 10 30 20 5 110 -40...+175 -55...+175 260
Unit V A
ICpuls IF
IFpuls VGE tSC Ptot Tj Tstg
V s W C
VGE = 15V, VCC 400V, Tj 150C Power dissipation TC = 25C Operating junction temperature Storage temperature Soldering temperature, wavesoldering, 1.6 mm (0.063 in.) from case for 10s
1 2)
J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2.3 Sep. 07
Power Semiconductors
TrenchStop(R) Series
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Diode thermal resistance, junction - case Thermal resistance, junction - ambient Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0 V , I C =0.2mA VCE(sat) V G E = 15 V, I C =10A T j = 25C T j = 175 C Diode forward voltage VF VGE=0V, IF=10A T j = 25C T j = 175 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C =0.3mA,V C E =V G E V C E = 60 0 V, VGE=0V T j = 25C T j = 175 C Gate-emitter leakage current Transconductance Integrated gate resistor Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current1) IC(SC) V G E =15V,t S C 5 s V C C = 400 V, T j = 2 5C Ciss Coss Crss QGate LE V C E =25V, VGE=0V, f=1MHz V C C = 48 0 V, I C =10A V G E =15V IGES gfs RGint V C E = 0 V ,V G E =20V V C E =20V, I C =10A 4.1 600 Symbol Conditions RthJA RthJCD RthJC Symbol Conditions
IKP10N60T p
Max. Value 1.35 1.9 62 Unit K/W
Value min. typ. 1.5 1.8 1.6 1.6 4.6 max. 2.05 2.0 5.7
Unit
V
A 6 none 40 1000 100 nA S
551 40 17 62 7 100
-
pF
nC nH A
1)
Allowed number of short circuits: <1000; time between short circuits: >1s. 2 Rev. 2.3 Sep. 07
Power Semiconductors
TrenchStop(R) Series
Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b trr Qrr Irrm dirr/dt T j = 25C , V R = 40 0 V , I F =10A, d i F /d t= 880A/s td(on) tr td(off) tf Eon Eoff Ets T j = 25C , V C C = 40 0 V, I C =10A, V G E = 0 /1 5 V, R G = 2 3 , L 2 ) =6 0nH , C 2 ) =40pF Energy losses include "tail" and diode reverse recovery. Symbol Conditions
IKP10N60T p
Value min. typ. 12 8 215 38 0.16 0.27 0.43 115 0.38 10 680 max. ns C A A/s mJ Unit
ns
Switching Characteristic, Inductive Load, at Tj=175 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b trr Qrr Irrm dirr/dt T j = 175 C V R = 40 0 V , I F =10A, d i F /d t= 880A/s 200 0.92 13 390 ns C A A/s td(on) tr td(off) tf Eon Eoff Ets T j = 175 C , V C C = 40 0 V, I C =10A, V G E = 0 /1 5 V, R G = 2 3 L 1 ) =6 0nH , C 1 ) =40pF Energy losses include "tail" and diode reverse recovery. 10 11 233 63 0.26 0.35 0.61 mJ ns Symbol Conditions Value min. typ. max. Unit
2) 1)
Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E. Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E. 3 Rev. 2.3 Sep. 07
Power Semiconductors
TrenchStop(R) Series
IKP10N60T p
tp=1s
30A 25A 20A 15A 10A 5A 0A 10H z T C =80C
10A
5s 20s
IC, COLLECTOR CURRENT
T C =110C
IC, COLLECTOR CURRENT
1A
100s 500s 10ms DC
Ic
Ic
100H z 1kH z 10kH z 100kH z
0,1A 1V
10V
100V
1000V
f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 175C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 23)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 175C; VGE=15V)
120W
30A
100W
IC, COLLECTOR CURRENT
POWER DISSIPATION
80W
20A
60W
40W
10A
Ptot,
20W
0W 25C
50C
75C
100C 125C 150C
0A 25C
75C
125C
TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 175C)
TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 175C)
Power Semiconductors
4
Rev. 2.3 Sep. 07
TrenchStop(R) Series
30A 25A 30A 25A
IKP10N60T p
V G E =20V 15V
V G E =20V 15V
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
20A 15A 10A 5A 0A 0V
12V 10V 8V 6V
20A 15A 10A 5A 0A
12V 10V 8V 6V
1V
2V
3V
4V
0V
1V
2V
3V
4V
5V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25C)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 175C)
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
25A
3,0V 2,5V 2,0V 1,5V 1,0V 0,5V 0,0V -50C
IC =20A
IC, COLLECTOR CURRENT
20A
IC =10A
15A
10A T J = 1 7 5 C 2 5 C 0A
IC =5A
5A
0V
2V
4V
6V
8V
10V
0C
50C
100C
150C
VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V)
TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V)
Power Semiconductors
5
Rev. 2.3 Sep. 07
TrenchStop(R) Series
IKP10N60T p
t d(off)
t d(off)
100ns
100ns tf
t, SWITCHING TIMES
t, SWITCHING TIMES
tf
t d(on) 10ns
t d(on) 10ns tr
tr 1ns 0A 5A 10A 15A 20A 1ns
10 20 30 40 50
IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175C, VCE = 400V, VGE = 0/15V, RG = 23, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ = 175C, VCE= 400V, VGE = 0/15V, IC = 10A, Dynamic test circuit in Figure E)
7V
t d(off)
VGE(th), GATE-EMITT TRSHOLD VOLTAGE
6V 5V 4V 3V 2V 1V 0V -50C typ. m ax.
100ns
t, SWITCHING TIMES
tf t d(on) 10ns tr
m in.
1ns 25C 50C 75C 100C 125C 150C
0C
50C
100C
150C
TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 10A, RG=23, Dynamic test circuit in Figure E)
TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.3mA)
Power Semiconductors
6
Rev. 2.3 Sep. 07
TrenchStop(R) Series
IKP10N60T p
E ts*
*) E on a n d E ts in c lu d e lo ss e s
*) E on and E ts include losses
E ts *
E, SWITCHING ENERGY LOSSES
0,8 m J
E off
E, SWITCHING ENERGY LOSSES
1,0 m J
du e to dio de rec ov e ry
due to diode recovery 0,8 mJ
0,6 mJ
E off
0,6 m J
0,4 mJ
E on*
0,4 m J E on * 0,2 m J
0,2 mJ
0,0 m J 0A
5A
1 0A
1 5A
0,0 mJ
10
20
30
40
50
IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ = 175C, VCE = 400V, VGE = 0/15V, RG = 23, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ = 175C, VCE = 400V, VGE = 0/15V, IC = 10A, Dynamic test circuit in Figure E)
*) E on and E ts include losses 0,6mJ due to diode recovery
*) E on and E ts include losses due to diode recovery
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
0,5mJ 0,4mJ
0,8m J
E ts *
0,6m J E ts * 0,4m J E off 0,2m J E on *
0,3mJ E off 0,2mJ 0,1mJ 0,0mJ E on*
50C
100C
150C
0,0m J 300V
350V
400V
450V
500V
550V
TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 10A, RG = 23, Dynamic test circuit in Figure E)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ = 175C, VGE = 0/15V, IC = 10A, RG = 23, Dynamic test circuit in Figure E)
Power Semiconductors
7
Rev. 2.3 Sep. 07
TrenchStop(R) Series
IKP10N60T p
C iss
1nF
VGE, GATE-EMITTER VOLTAGE
15V
120V 10V
480V
c, CAPACITANCE
100pF C oss
5V
C rss
0V 0nC
20nC
40nC
60nC
10pF
0V
10V
20V
QGE, GATE CHARGE Figure 17. Typical gate charge (IC=10 A)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz)
12s
IC(sc), short circuit COLLECTOR CURRENT
SHORT CIRCUIT WITHSTAND TIME
150A 125A 100A 75A 50A 25A 0A 12V
10s 8s 6s 4s 2s 0s 10V
tSC,
14V
16V
18V
11V
12V
13V
14V
VGE, GATE-EMITTETR VOLTAGE Figure 19. Typical short circuit collector current as a function of gateemitter voltage (VCE 400V, Tj 150C)
VGE, GATE-EMITETR VOLTAGE Figure 20. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25C, TJmax<150C)
Power Semiconductors
8
Rev. 2.3 Sep. 07
TrenchStop(R) Series
IKP10N60T p
ZthJC, TRANSIENT THERMAL RESISTANCE
D=0.5 0.2 0.1 0.05 0.02 0.01 single pulse
R,(K/W) 0.2911 0.4092 0.5008 0.1529
R1
ZthJC, TRANSIENT THERMAL RESISTANCE
10 K/W
0
10 K/W
0
D=0.5
, (s) -2 6.53*10 -3 8.33*10 -4 7.37*10 -5 7.63*10
R2
0.2 0.1 0.05 0.02 0.01
R,(K/W) 0.3169 0.4734 0.6662 0.4398
R1
, (s) -2 4.629*10 -3 7.07*10 -3 1.068*10 -4 1.253*10
R2
6
10 K/W
-1
10 K/W
-1
C1=1/R1
C2=2/R2
C1=1/R1
C2=2/R2
single pulse
10 K/W 10s
-2
100s
1ms
10ms
100ms
10 K/W 1s
-2
10s 100s
1ms
10ms 100ms
tP, PULSE WIDTH Figure 21. IGBT transient thermal resistance (D = tp / T)
tP, PULSE WIDTH Figure 22. Diode transient thermal impedance as a function of pulse width (D=tP/T)
300ns 250ns 200ns 150ns 100ns
0,8C
T J=175C
Qrr, REVERSE RECOVERY CHARGE
0,7C 0,6C 0,5C 0,4C 0,3C 0,2C 0,1C 0,0C
trr, REVERSE RECOVERY TIME
TJ=175C
T J=25C
TJ=25C
50ns 0ns 200A/s
400A/s
600A/s
800A/s
200A/s
400A/s
600A/s
800A/s
diF/dt, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery time as a function of diode current slope (VR=400V, IF=10A, Dynamic test circuit in Figure E)
diF/dt, DIODE CURRENT SLOPE Figure 24. Typical reverse recovery charge as a function of diode current slope (VR = 400V, IF = 10A, Dynamic test circuit in Figure E)
Power Semiconductors
9
Rev. 2.3 Sep. 07
TrenchStop(R) Series
IKP10N60T p
T J=25C
14A
REVERSE RECOVERY CURRENT
T J =175C
dirr/dt, DIODE PEAK RATE OF FALL OF REVERSE RECOVERY CURRENT
-700A/s -600A/s -500A/s -400A/s
12A 10A 8A 6A 4A 2A 0A
T J =25C
T J=175C
-300A/s -200A/s -100A/s 0A/s 400A/s
Irr,
200A/s
400A/s
600A/s
800A/s
600A/s
800A/s
diF/dt, DIODE CURRENT SLOPE Figure 25. Typical reverse recovery current as a function of diode current slope (VR = 400V, IF = 10A, Dynamic test circuit in Figure E)
diF/dt, DIODE CURRENT SLOPE Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=400V, IF=10A, Dynamic test circuit in Figure E)
30A T J =25C 175C
2,0V I F =20A
VF, FORWARD VOLTAGE
IF, FORWARD CURRENT
20A
1,5V
10A
5A 1,0V
10A
0,5V
0A
0V
1V
2V
0,0V -50C
0C
50C
100C
150C
VF, FORWARD VOLTAGE Figure 27. Typical diode forward current as a function of forward voltage
TJ, JUNCTION TEMPERATURE Figure 28. Typical diode forward voltage as a function of junction temperature
Power Semiconductors
10
Rev. 2.3 Sep. 07
TrenchStop(R) Series
PG-TO-220-3-1
IKP10N60T p
Power Semiconductors
11
Rev. 2.3 Sep. 07
TrenchStop(R) Series
i,v diF /dt
IKP10N60T p
tr r =tS +tF Qr r =QS +QF tr r
IF
tS QS
tF 10% Ir r m t VR
Ir r m
QF
dir r /dt 90% Ir r m
Figure C. Definition of diodes switching characteristics
1
Tj (t) p(t)
r1
r2
2
n
rn
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit Leakage inductance L =60nH a nd Stray capacity C =40pF.
Power Semiconductors
12
Rev. 2.3 Sep. 07
TrenchStop(R) Series
IKP10N60T p
Edition 2006-01 Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 1/25/08. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Power Semiconductors
13
Rev. 2.3 Sep. 07

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